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Details

Language: English
Units: 40
Lesson content
  • Lec 1 Introduction on VLSI Design  
  • Lec 2 Bipolar Junction Transistor Fabrication  
  • Lec 3 MOSFET Fabrication for IC  
  • Lec 4 Crystal Structure of Si  
  • Lec 5 Crystal Structure contd  
  • Lec 6 Defects in Crystal + Crystal growth  
  • Lec 7 Crystal growth Contd + Epitaxy I  
  • Lec 8 Epitaxy II - Vapour phase Epitaxy  
  • Lec 9 - Epitaxy III - Doping during Epitaxy  
  • Lec 10 Molecular beam Epitaxy  
  • Lec 11 Oxidation I - Kinetics of Oxidation  
  • Lec 12 Oxidation II Oxidation rate constants  
  • Lec 13 Oxidation III - Dopant Redistribution  
  • Lec 14 Oxidation IV - Oxide Charges  
  • Lec 15 Diffusion I - Theory of Diffusion  
  • Lec 16 Diffusion II - Infinite Source  
  • Lec 17 Diffusion III - Actual Doping Profiles  
  • Lec 18 Diffusion IV Diffusion Systems  
  • Lec 19 Ion - Implantation Process  
  • Lec 20 Ion - Implantation Process  
  • Lec 21 Annealing of Damages  
  • Lec 22 Masking during Implantation  
  • Lec 23 Lithography - I  
  • Lec 24 Lithography - II  
  • Lec 25 Wet Chemical Etching  
  • Lec 26 Dry Etching  
  • Lec 27 Plasma Etching Systems  
  • Lec 28 Etching of Si,Sio2,SiN and other materials  
  • Lec 29 Plasma Deposition Process  
  • Lec 30 Metalization - I  
  • Lec 31 Problems in Aluminium Metal contacts  
  • Lec 32 IC BJT - From junction isolation to LOCOS  
  • Lec 33 Problems in LOCOS + Trench isolation  
  • Lec 34 More about BJT Fabrication and Realization  
  • Lec 35 Circuits + Transistors in ECL Circuits  
  • Lec 36 MOSFET I - Metal gate vs Self-aligned Poly-gate  
  • Lec 37 MOSFET II Tailoring of Device Parameters  
  • Lec 38 CMOS Technology  
  • Lec 39 Latch - up in CMOS  
  • Lec 40 BICMOS Technology
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