Details
Language: English
Units: 40
Lesson content
- Lec 1 Introduction on VLSI Design
- Lec 2 Bipolar Junction Transistor Fabrication
- Lec 3 MOSFET Fabrication for IC
- Lec 4 Crystal Structure of Si
- Lec 5 Crystal Structure contd
- Lec 6 Defects in Crystal + Crystal growth
- Lec 7 Crystal growth Contd + Epitaxy I
- Lec 8 Epitaxy II - Vapour phase Epitaxy
- Lec 9 - Epitaxy III - Doping during Epitaxy
- Lec 10 Molecular beam Epitaxy
- Lec 11 Oxidation I - Kinetics of Oxidation
- Lec 12 Oxidation II Oxidation rate constants
- Lec 13 Oxidation III - Dopant Redistribution
- Lec 14 Oxidation IV - Oxide Charges
- Lec 15 Diffusion I - Theory of Diffusion
- Lec 16 Diffusion II - Infinite Source
- Lec 17 Diffusion III - Actual Doping Profiles
- Lec 18 Diffusion IV Diffusion Systems
- Lec 19 Ion - Implantation Process
- Lec 20 Ion - Implantation Process
- Lec 21 Annealing of Damages
- Lec 22 Masking during Implantation
- Lec 23 Lithography - I
- Lec 24 Lithography - II
- Lec 25 Wet Chemical Etching
- Lec 26 Dry Etching
- Lec 27 Plasma Etching Systems
- Lec 28 Etching of Si,Sio2,SiN and other materials
- Lec 29 Plasma Deposition Process
- Lec 30 Metalization - I
- Lec 31 Problems in Aluminium Metal contacts
- Lec 32 IC BJT - From junction isolation to LOCOS
- Lec 33 Problems in LOCOS + Trench isolation
- Lec 34 More about BJT Fabrication and Realization
- Lec 35 Circuits + Transistors in ECL Circuits
- Lec 36 MOSFET I - Metal gate vs Self-aligned Poly-gate
- Lec 37 MOSFET II Tailoring of Device Parameters
- Lec 38 CMOS Technology
- Lec 39 Latch - up in CMOS
- Lec 40 BICMOS Technology
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